2020-07-08Zeitschriftenartikel
Electrical Transport Properties of Vanadium‐Doped Bi2Te2.4Se0.6
Riha, Christian; Düzel, Birkan; Graser, Karl; Chiatti, Olivio; Golias, Evangelos; Sánchez-Barriga, Jaime; Rader, Oliver; Tereshchenko, Oleg; Fischer, Saskia F.
Vanadium‐doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless ...
