2021-03-24Zeitschriftenartikel
Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
Schlipf, Jon; Tetzner, Henriette; Spirito, Davide; Spirito, Davide; Manganelli, Costanza Lucia; Capellini, Giovanni; Huang, Michael R. S.; Koch, Christoph; Clausen, Caterina; Elsayed, Ahmed; Oehme, Michael; Chiussi, Stefano; Schulze, Jörg; Fischer, Inga A.
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and ...
