2018-08-22Zeitschriftenartikel
Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon
Guo, Daqian; Jiang, Qi; Tang, Mingchu; Chen, Siming; Mazur, Yuriy I.; Maidaniuk, Yurii; Benamara, Mourad; Semtsiv, Mykhaylo; Masselink, William Ted; Salamo, Gregory; Liu, Huiyun; Wu, Jiang
An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation ...