Browsing by Author "Shin, Dongguen"

Now showing items 1-8 of 8

2021-07-15Zeitschriftenartikel

Energy Level Alignment at the C60/Monolayer‐WS2 Interface on Insulating and Conductive Substrates

Ma, Jie; Amsalem, Patrick; Schultz, Thorsten; Shin, Dongguen; Xu, Xiaomin; Koch, Norbert

Combining a transition metal dichalcogenide monolayer (ML) and molecular semiconductors is an attractive route for forming nanoscale hybrid van der Waals heterostructures with potentially novel (opto‐)electronic properties. ...
2022-02-01Zeitschriftenartikel

Illumination-Driven Energy Level Realignment at Buried Interfaces between Organic Charge Transport Layers and a Lead Halide Perovskite

Zu, Fengshuo; Roß, Marcel; Frohloff, Lennart; Shin, Dongguen; Tessler, Nir; Albrecht, Steve; Koch, Norbert

Tremendous progress in employing metal halide perovskites (MHPs) in a variety of applications, especially in photovoltaics, has been made in the past decade. To unlock the full potential of MHP materials in optoelectronic ...
2021-05-03Zeitschriftenartikel

Mechanism and Timescales of Reversible p‐Doping of Methylammonium Lead Triiodide by Oxygen

Shin, Dongguen; Zu, Fengshuo; Cohen, Ayala V.; Yi, Yeonjin; Kronik, Leeor; Koch, Norbert

Understanding and controlling the energy level alignment at interfaces with metal halide perovskites (MHPs) is essential for realizing the full potential of these materials for use in optoelectronic devices. To date, ...
2021-08-05Zeitschriftenartikel

Reversible oxygen-induced p-doping of mixed-cation halide perovskites

Shin, Dongguen; Zu, Fengshuo; Koch, Norbert

To fully unlock the potential of metal halide perovskites (MHPs) for use in optoelectronic devices, a comprehensive understanding of their electronic properties is in strong demand but presently lacking. This photoelectron ...
2021-05-25Zeitschriftenartikel

Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures

Park, Soohyung; Wang, Haiyuan; Schultz, Thorsten; Shin, Dongguen; Ovsyannikov, Ruslan; Zacharias, Marios; Maksimov, Dmitrii; Meissner, Matthias; Hasegawa, Yuri; Yamaguchi, Takuma; Kera, Satoshi; Aljarb, Areej; Hakami, Marim A.; Li, Lain-Jong; Tung, Vincent;

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of state distribution of the components governs ...
2022-11-04Zeitschriftenartikel

The Electronic Properties of a 2D Ruddlesden‐Popper Perovskite and its Energy Level Alignment with a 3D Perovskite Enable Interfacial Energy Transfer

Shin, Dongguen; Zu, Fengshuo; Nandayapa, Edgar; Frohloff, Lennart; Albert, Emily; List-Kratochvil, Emil J.W.; Koch, Norbert

The success of using 2D Ruddlesden-Popper metal halide perovskites (MHPs) in optoelectronic devices has ignited great interest as means for energy level tuning at the interface with 3D MHPs. Inter alia, the application of ...
2021-08-11Zeitschriftenartikel

The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

Park, Soohyung; Schultz, Thorsten; Shin, Dongguen; Mutz, Niklas; Aljarb, Areej; Kang, Hee Seong; Lee, Chul-Ho; Li, Lain-Jong; Xu, Xiaomin; Tung, Vincent; List-Kratochvil, Emil J.W.; Blumstengel, Sylke; Amsalem, Patrick; Koch, Norbert

A comprehensive understanding of the energy level alignment mechanisms between two-dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic ...
2021-05-05Zeitschriftenartikel

Type-I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement

Park, Soohyung; Mutz, Niklas; Kovalenko, Sergey A.; Schultz, Thorsten; Shin, Dongguen; Aljarb, Areej; Li, Lain-Jong; Tung, Vincent; Amsalem, Patrick; List-Kratochvil, Emil J.W.; Stähler, Julia; Xu, Xiaomin; Blumstengel, Sylke; Koch, Norbert

Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, ...