Browsing by Author "Amsalem, Patrick"

Now showing items 1-7 of 7

2018-01-11Zeitschriftenartikel

Direct determination of monolayer MoS2 and WSe2 exciton binding energies on insulating and metallic substrates

Park, Soohyung; Mutz, Niklas; Schultz, Thorsten; Blumstengel, Sylke; Han, Ali; Aljarb, Areej; Li, Lain-Jong; List-Kratochvil, Emil J.W.; Amsalem, Patrick; Koch, Norbert

Understanding the excitonic nature of excited states in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is of key importance to make use of their optical and charge transport properties in optoelectronic ...
2021-09-22Zeitschriftenartikel

Electronic properties and degradation upon VUV irradiation of sodium chloride on Ag(111) studied by photoelectron spectroscopy

Wang, Haibo; Oehzelt, Martin; Winkler, Stefanie; Ovsyannikov, Ruslan; Koch, Norbert; Amsalem, Patrick

The growth as well as vacuum ultraviolet (VUV) radiation-induced degradation of sodium chloride (NaCl) on Ag(111) is investigated by ultraviolet and x-ray photoelectron spectroscopy. In line with previous scanning tunneling ...
2021-07-15Zeitschriftenartikel

Energy Level Alignment at the C60/Monolayer‐WS2 Interface on Insulating and Conductive Substrates

Ma, Jie; Amsalem, Patrick; Schultz, Thorsten; Shin, Dongguen; Xu, Xiaomin; Koch, Norbert

Combining a transition metal dichalcogenide monolayer (ML) and molecular semiconductors is an attractive route for forming nanoscale hybrid van der Waals heterostructures with potentially novel (opto‐)electronic properties. ...
2015-05-18Zeitschriftenartikel

Probing the energy levels in hole-doped molecular semiconductors

Winkler, Stefanie; Amsalem, Patrick; Frisch, Johannes; Oehzelt, Martin; Heimel, Georg; Koch, Norbert

Understanding the nature of polarons – the fundamental charge carriers in molecular semiconductors – is indispensable for rational material design that targets superior (opto-) electronic device functionality. The traditionally ...
2021-05-25Zeitschriftenartikel

Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures

Park, Soohyung; Wang, Haiyuan; Schultz, Thorsten; Shin, Dongguen; Ovsyannikov, Ruslan; Zacharias, Marios; Maksimov, Dmitrii; Meissner, Matthias; Hasegawa, Yuri; Yamaguchi, Takuma; Kera, Satoshi; Aljarb, Areej; Hakami, Marim A.; Li, Lain-Jong; Tung, Vincent;

Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of state distribution of the components governs ...
2021-08-11Zeitschriftenartikel

The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

Park, Soohyung; Schultz, Thorsten; Shin, Dongguen; Mutz, Niklas; Aljarb, Areej; Kang, Hee Seong; Lee, Chul-Ho; Li, Lain-Jong; Xu, Xiaomin; Tung, Vincent; List-Kratochvil, Emil J.W.; Blumstengel, Sylke; Amsalem, Patrick; Koch, Norbert

A comprehensive understanding of the energy level alignment mechanisms between two-dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic ...
2021-05-05Zeitschriftenartikel

Type-I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement

Park, Soohyung; Mutz, Niklas; Kovalenko, Sergey A.; Schultz, Thorsten; Shin, Dongguen; Aljarb, Areej; Li, Lain-Jong; Tung, Vincent; Amsalem, Patrick; List-Kratochvil, Emil J.W.; Stähler, Julia; Xu, Xiaomin; Blumstengel, Sylke; Koch, Norbert

Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, ...