2007-05-01Zeitschriftenartikel
Numerical simulation of temperature fields during the sublimationgrowth of SiC single crystals, using WIAS-HiTNIHS
Geiser, Jürgen; Klein, Olaf; Philip, Peter
We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). ...
