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Browsing by Subject "A1. Anisotropic thermal conductivity"

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    • 2007-05-01Zeitschriftenartikel
      Numerical simulation of temperature fields during the sublimationgrowth of SiC single crystals, using WIAS-HiTNIHS 
      Geiser, Jürgen; Klein, Olaf; Philip, Peter
      We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). ...
      DINI-Zertifikat 2019OpenAIRE validatedORCID Consortium
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