Browsing by Subject "A2. Growth from vapor"

Now showing items 1-2 of 2

2007-05-01Zeitschriftenartikel

Numerical simulation of temperature fields during the sublimationgrowth of SiC single crystals, using WIAS-HiTNIHS

Geiser, Jürgen; Klein, Olaf; Philip, Peter

We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). ...
2006-12-15Zeitschriftenartikel

Transient numerical study of temperature gradients during sublimationgrowth of SiC

Geiser, Jürgen; Klein, Olaf; Philip, Peter

Using transient and stationary mathematical heat transfer models including heat conduction, radiation, and radio frequency (RF) induction heating, we numerically investigate the time evolution of temperature gradients in ...