Logo of Humboldt-Universität zu BerlinLogo of Humboldt-Universität zu Berlin
edoc-Server
Open-Access-Publikationsserver der Humboldt-Universität
de|en
Header image: facade of Humboldt-Universität zu Berlin
View Item 
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
All of edoc-ServerCommunity & CollectionTitleAuthorSubjectThis CollectionTitleAuthorSubject
PublishLoginRegisterHelp
StatisticsView Usage Statistics
All of edoc-ServerCommunity & CollectionTitleAuthorSubjectThis CollectionTitleAuthorSubject
PublishLoginRegisterHelp
StatisticsView Usage Statistics
View Item 
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
2007-05-01Zeitschriftenartikel DOI: 10.1016/j.jcrysgro.2006.11.350
Numerical simulation of temperature fields during the sublimationgrowth of SiC single crystals, using WIAS-HiTNIHS
Geiser, Jürgen
Klein, Olaf
Philip, Peter
Mathematisch-Naturwissenschaftliche Fakultät II
We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). The results are computed using our software WIAS-HiTNIHS, the WIAS High Temperature Numerical Induction Heating Simulator; pronunciation: not, vert, similarhit-nice, by solving the energy balance in the entire growth apparatus, taking into account the heat conduction in the solid parts as well as in gas cavities, and also accounting for the radiative heat transfer between the surfaces of the gas cavities. The insulation in a PVT growth apparatus usually consists of graphite felt, where the fibers are aligned in one particular direction, resulting in an anisotropic thermal conductivity. We show that neglecting this anisotropy can overestimate the SiC crystal's temperature by 70 K or underestimate the required heating power by 800 W.
Files in this item
Thumbnail
26uzz8TYQzht2.pdf — Adobe PDF — 1.476 Mb
MD5: 7f1d3ba26757c492711dc11eec3809e5
Cite
BibTeX
EndNote
RIS
InCopyright
Details
DINI-Zertifikat 2019OpenAIRE validatedORCID Consortium
Imprint Policy Contact Data Privacy Statement
A service of University Library and Computer and Media Service
© Humboldt-Universität zu Berlin
 
DOI
10.1016/j.jcrysgro.2006.11.350
Permanent URL
https://doi.org/10.1016/j.jcrysgro.2006.11.350
HTML
<a href="https://doi.org/10.1016/j.jcrysgro.2006.11.350">https://doi.org/10.1016/j.jcrysgro.2006.11.350</a>