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2006-12-15Zeitschriftenartikel DOI: 10.1016/j.jcrysgro.2006.08.046
Transient numerical study of temperature gradients during sublimationgrowth of SiC
dc.contributor.authorGeiser, Jürgen
dc.contributor.authorKlein, Olaf
dc.contributor.authorPhilip, Peter
dc.date.accessioned2017-06-17T01:07:38Z
dc.date.available2017-06-17T01:07:38Z
dc.date.created2009-07-06
dc.date.issued2006-12-15
dc.identifier.issn0022-0248
dc.identifier.urihttp://edoc.hu-berlin.de/18452/10102
dc.description.abstractUsing transient and stationary mathematical heat transfer models including heat conduction, radiation, and radio frequency (RF) induction heating, we numerically investigate the time evolution of temperature gradients in axisymmetric growth apparatus during the sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). Temperature gradients in the bulk and on the surface of the growing crystal can cause defects. Here, the evolution of these gradients is studied numerically during the heating, growth, and cooling stages, varying the apparatus design, namely the amount of the source powder charge as well as the size of the upper blind hole used for cooling of the seed. Our results show that a smaller upper blind hole can reduce the temperature gradients both in the bulk and on the surface of the crystal without reducing the surface temperature itself.eng
dc.language.isoeng
dc.publisherHumboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät II
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subjectA1. Computer simulationeng
dc.subjectA1. Heat transfereng
dc.subjectA2. Growth from vaporeng
dc.subjectA2. Single crystal growtheng
dc.subjectB2. Semiconducting silicon compoundseng
dc.subject.ddc510 Mathematik
dc.titleTransient numerical study of temperature gradients during sublimationgrowth of SiC
dc.typearticle
dc.subtitleDependence on apparatus design
dc.identifier.urnurn:nbn:de:kobv:11-10099109
dc.identifier.doi10.1016/j.jcrysgro.2006.08.046
dc.identifier.doihttp://dx.doi.org/10.18452/9450
local.edoc.container-titleJournal of Crystal Growth
local.edoc.type-nameZeitschriftenartikel
local.edoc.institutionMathematisch-Naturwissenschaftliche Fakultät II
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
local.edoc.container-urlhttp://www.sciencedirect.com/science/journal/00220248
local.edoc.container-volume297
local.edoc.container-issue1
local.edoc.container-year2006
local.edoc.container-firstpage20
local.edoc.container-lastpage32
dc.description.versionPeer Reviewed

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