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2020-01-24Zeitschriftenartikel DOI: 10.18452/21075
Direct Observation of Conductive Polymer Induced Inversion Layer in n-Si and Correlation to Solar Cell Performance
dc.contributor.authorWang, Rongbin
dc.contributor.authorWang, Yusheng
dc.contributor.authorWu, Chen
dc.contributor.authorZhai, Tianshu
dc.contributor.authorYang, Jiacheng
dc.contributor.authorSun, Baoquan
dc.contributor.authorDuhm, Steffen
dc.contributor.authorKoch, Norbert
dc.date.accessioned2020-01-27T10:28:40Z
dc.date.available2020-01-27T10:28:40Z
dc.date.issued2020-01-24none
dc.identifier.urihttp://edoc.hu-berlin.de/18452/21828
dc.description.abstractHeterojunctions formed by ultrathin conductive polymer [poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate)—PEDOT:PSS] films and n‐type crystalline silicon are investigated by photoelectron spectroscopy. Large shifts of Si 2p core levels upon PEDOT:PSS deposition provide evidence that a dopant‐free p–n junction, i.e., an inversion layer, is formed within Si. Among the investigated PEDOT:PSS formulations, the largest induced band bending within Si (0.71 eV) is found for PH1000 (high PEDOT content) combined with a wetting agent and the solvent additive dimethyl sulfoxide (DMSO). Without DMSO, the induced band bending is reduced, as is also the case with a PEDOT:PSS formulation with higher PSS content. The interfacial energy level alignment correlates well with the characteristics of PEDOT:PSS/n‐Si solar cells, where high polymer conductivity and sufficient Si‐passivation are also required to achieve high power conversion efficiency.eng
dc.language.isoengnone
dc.publisherHumboldt-Universität zu Berlin
dc.rights(CC BY 4.0) Attribution 4.0 Internationalger
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectband bendingeng
dc.subjectcore level shiftseng
dc.subjectenergy level alignmenteng
dc.subjectinversion layereng
dc.subjectPEDOT:PSS/Si solar celleng
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitennone
dc.subject.ddc540 Chemie und zugeordnete Wissenschaftennone
dc.subject.ddc530 Physiknone
dc.titleDirect Observation of Conductive Polymer Induced Inversion Layer in n-Si and Correlation to Solar Cell Performancenone
dc.typearticle
dc.identifier.urnurn:nbn:de:kobv:11-110-18452/21828-9
dc.identifier.doihttp://dx.doi.org/10.18452/21075
dc.type.versionpublishedVersionnone
local.edoc.pages10none
local.edoc.type-nameZeitschriftenartikel
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
dc.description.versionPeer Reviewednone
dc.identifier.eissn1616-3028
dcterms.bibliographicCitation.doi10.1002/adfm.201903440
dcterms.bibliographicCitation.journaltitleAdvanced functional materialsnone
dcterms.bibliographicCitation.articlenumber1903440none
dcterms.bibliographicCitation.originalpublishernameWiley-VCHnone
dcterms.bibliographicCitation.originalpublisherplaceWeinheimnone
bua.departmentMathematisch-Naturwissenschaftliche Fakultätnone

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