Show simple item record

2020-05-04Zeitschriftenartikel DOI: 10.18452/21520
Oligothiophene-Based Phosphonates for Surface Modification of Ultraflat Transparent Conductive Oxides
dc.contributor.authorTimpel, Melanie
dc.contributor.authorNardi, Marco Vittorio
dc.contributor.authorWegner, Berthold
dc.contributor.authorLigorio, Giovanni
dc.contributor.authorPasquali, Luca
dc.contributor.authorHildebrandt, Jana
dc.contributor.authorPätzel, Michael
dc.contributor.authorHecht, Stefan
dc.contributor.authorOhta, Hiromichi
dc.contributor.authorKoch, Norbert
dc.date.accessioned2020-06-24T09:21:33Z
dc.date.available2020-06-24T09:21:33Z
dc.date.issued2020-05-04none
dc.identifier.other0.1002/admi.201902114
dc.identifier.urihttp://edoc.hu-berlin.de/18452/22246
dc.description.abstractThe self‐assembly of electroactive organic molecules on transparent conductive oxides is a versatile strategy to engineer the interfacial energy‐level alignment and to enhance charge carrier injection in optoelectronic devices. Via chemical grafting of an aromatic oligothiophene molecule by changing the position of the phosphonic acid anchoring group with respect to the organic moiety (terminal and internal), the direction of the main molecular dipole is changed, i.e., from parallel to perpendicular to the substrate, to study the molecular arrangement and electronic properties at the organic–inorganic interface. It is found that the observed work function increase cannot solely be predicted based on the calculated molecular dipole moment of the oligothiophene‐based phosphonates. In addition, charge transfer from the substrate to the molecule has to be taken into account. Molecular assembly and induced electronic changes are analogous for both indium‐tin oxide (ITO) and zinc oxide (ZnO), demonstrating the generality of the approach and highlighting the direct correlation between molecular coverage and electronic effects.eng
dc.language.isoengnone
dc.publisherHumboldt-Universität zu Berlin
dc.rights(CC BY 4.0) Attribution 4.0 Internationalger
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectIndium‐tin oxideeng
dc.subjectphosphonic acideng
dc.subjectphotoelectron spectroscopyeng
dc.subjectself‐assembled monolayereng
dc.subjectzinc oxideeng
dc.subject.ddc540 Chemie und zugeordnete Wissenschaftennone
dc.subject.ddc600 Technik, Technologienone
dc.titleOligothiophene-Based Phosphonates for Surface Modification of Ultraflat Transparent Conductive Oxidesnone
dc.typearticle
dc.identifier.urnurn:nbn:de:kobv:11-110-18452/22246-0
dc.identifier.doihttp://dx.doi.org/10.18452/21520
dc.type.versionpublishedVersionnone
local.edoc.container-titleAdvanced materials interfacesnone
local.edoc.pages8none
local.edoc.type-nameZeitschriftenartikel
local.edoc.institutionMathematisch-Naturwissenschaftliche Fakultätnone
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
local.edoc.container-publisher-nameWiley-VCHnone
local.edoc.container-publisher-placeWeinheimnone
local.edoc.container-volume7none
local.edoc.container-issue12none
dc.description.versionPeer Reviewednone
local.edoc.container-articlenumber1902114none
dc.identifier.eissn2196-7350

Show simple item record