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2020-07-08Zeitschriftenartikel DOI: 10.1002/pssb.202000088
Electrical Transport Properties of Vanadium‐Doped Bi2Te2.4Se0.6
dc.contributor.authorRiha, Christian
dc.contributor.authorDüzel, Birkan
dc.contributor.authorGraser, Karl
dc.contributor.authorChiatti, Olivio
dc.contributor.authorGolias, Evangelos
dc.contributor.authorSánchez-Barriga, Jaime
dc.contributor.authorRader, Oliver
dc.contributor.authorTereshchenko, Oleg
dc.contributor.authorFischer, Saskia F.
dc.date.accessioned2021-02-19T11:25:30Z
dc.date.available2021-02-19T11:25:30Z
dc.date.issued2020-07-08none
dc.date.updated2021-02-15T13:50:48Z
dc.identifier.urihttp://edoc.hu-berlin.de/18452/23115
dc.description.abstractVanadium‐doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle‐resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van‐der‐Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase‐coherence lengths of up to 250 nm for x = 0.015.eng
dc.description.sponsorshipDeutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659
dc.description.sponsorshipHelmholtz-Gemeinschaft http://dx.doi.org/10.13039/501100001656
dc.language.isoengnone
dc.publisherHumboldt-Universität zu Berlin
dc.rights(CC BY 4.0) Attribution 4.0 Internationalger
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectphotoemissioneng
dc.subjecttopological insulatorseng
dc.subjecttransport propertieseng
dc.subjectweak antilocalizationeng
dc.subject.ddc530 Physiknone
dc.titleElectrical Transport Properties of Vanadium‐Doped Bi2Te2.4Se0.6none
dc.typearticle
dc.identifier.urnurn:nbn:de:kobv:11-110-18452/23115-7
dc.identifier.doi10.1002/pssb.202000088none
dc.identifier.doihttp://dx.doi.org/10.18452/22505
dc.type.versionupdatedVersionnone
local.edoc.container-titlephysica status solidi (b)none
local.edoc.pages6none
local.edoc.type-nameZeitschriftenartikel
local.edoc.institutionMathematisch-Naturwissenschaftliche Fakultätnone
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
local.edoc.container-publisher-nameWiley-VCHnone
local.edoc.container-publisher-placeWeinheimnone
local.edoc.container-volume258none
local.edoc.container-issue1none
dc.description.versionPeer Reviewednone
local.edoc.container-articlenumber2000088none
local.edoc.affiliationRiha, Christian; Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin Germanynone
local.edoc.affiliationDüzel, Birkan; Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin Germanynone
local.edoc.affiliationGraser, Karl; Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin Germanynone
local.edoc.affiliationChiatti, Olivio; Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin Germanynone
local.edoc.affiliationGolias, Evangelos; BESSY II Helmholtz-Zentrum-Berlin für Materialien und Energie, 12489 Berlin Germanynone
local.edoc.affiliationSánchez-Barriga, Jaime; BESSY II Helmholtz-Zentrum-Berlin für Materialien und Energie, 12489 Berlin Germanynone
local.edoc.affiliationRader, Oliver; BESSY II Helmholtz-Zentrum-Berlin für Materialien und Energie, 12489 Berlin Germanynone
local.edoc.affiliationTereshchenko, Oleg E.; Physics Department Novosibirsk State University, 630090 Novosibirsk Russianone
local.edoc.affiliationFischer, Saskia F.; Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin Germanynone

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