Logo of Humboldt-Universität zu BerlinLogo of Humboldt-Universität zu Berlin
edoc-Server
Open-Access-Publikationsserver der Humboldt-Universität
de|en
Header image: facade of Humboldt-Universität zu Berlin
View Item 
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
All of edoc-ServerCommunity & CollectionTitleAuthorSubjectThis CollectionTitleAuthorSubject
PublishLoginRegisterHelp
StatisticsView Usage Statistics
All of edoc-ServerCommunity & CollectionTitleAuthorSubjectThis CollectionTitleAuthorSubject
PublishLoginRegisterHelp
StatisticsView Usage Statistics
View Item 
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
  • edoc-Server Home
  • Artikel und Monographien
  • Zweitveröffentlichungen
  • View Item
2018-12-21Zeitschriftenartikel DOI: 10.1088/1361-648X/aaf310
Electronic properties of hybrid organic/inorganic semiconductor pn-junctions
Futscher, Moritz H. cc
Schultz, Thorsten cc
Frisch, Johannes
Ralaiarisoa, Maryline
Metwalli, Ezzeldin cc
Nardi, Marco V.
Müller-Buschbaum, Peter cc
Koch, Norbert cc
Mathematisch-Naturwissenschaftliche Fakultät
Hybrid inorganic/organic semiconductor heterojunctions are candidates to expand the scope of purely organic or inorganic junctions in electronic and optoelectronic devices. Comprehensive understanding of bulk and interface doping on the junction’s electronic properties is therefore desirable. In this work, we elucidate the energy level alignment and its mechanisms at a prototypical hybrid pn-junction comprising ZnO (n-type) and p-doped N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) as semiconductors, using photoelectron spectroscopy. The level alignment can be quantitatively described by the interplay of contact-induced band and energy level bending in the inorganic and organic component away from the interface, and an interface dipole due to the push-back effect. By adjusting the dopant concentration in α-NPD, the position of the frontier energy levels of ZnO can be varied by over 0.5 eV and that of α-NPD by over 1 eV. The tunability of this pn-junction’s energy levels evidences the substantial potential of the hybrid approach for enhancing device functionality.
Files in this item
Thumbnail
cm_31_6_064002.pdf — Adobe PDF — 913.3 Kb
MD5: 1a7ce4e845d0aefeec82f2bca3e04030
Cite
BibTeX
EndNote
RIS
(CC BY 3.0) Attribution 3.0 Unported(CC BY 3.0) Attribution 3.0 Unported
Details
DINI-Zertifikat 2019OpenAIRE validatedORCID Consortium
Imprint Policy Contact Data Privacy Statement
A service of University Library and Computer and Media Service
© Humboldt-Universität zu Berlin
 
DOI
10.1088/1361-648X/aaf310
Permanent URL
https://doi.org/10.1088/1361-648X/aaf310
HTML
<a href="https://doi.org/10.1088/1361-648X/aaf310">https://doi.org/10.1088/1361-648X/aaf310</a>