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2021-07-15Zeitschriftenartikel DOI: 10.18452/24582
Energy Level Alignment at the C60/Monolayer‐WS2 Interface on Insulating and Conductive Substrates
dc.contributor.authorMa, Jie
dc.contributor.authorAmsalem, Patrick
dc.contributor.authorSchultz, Thorsten
dc.contributor.authorShin, Dongguen
dc.contributor.authorXu, Xiaomin
dc.contributor.authorKoch, Norbert
dc.date.accessioned2022-04-29T11:39:23Z
dc.date.available2022-04-29T11:39:23Z
dc.date.issued2021-07-15none
dc.date.updated2022-03-21T04:14:04Z
dc.identifier.urihttp://edoc.hu-berlin.de/18452/25259
dc.description.abstractCombining a transition metal dichalcogenide monolayer (ML) and molecular semiconductors is an attractive route for forming nanoscale hybrid van der Waals heterostructures with potentially novel (opto‐)electronic properties. The energy level alignment at the hybrid interface governs these properties, but precise determination of the interfacial electronic structure is challenging due to the pronounced excitonic nature of both components and the non‐trivial band structure of the inorganic ML. For instance, dielectric screening by the supporting substrate of such a heterostructure may impact the energy levels, but very few experiments have attended to this important issue to date. Here, it is shown how photoelectron spectroscopy can be used to unravel the energy level line‐up at the C60/ML‐WS2 interface supported on an insulating (sapphire) and a semi‐metallic (graphite) substrates. On both substrates, an almost identical staggered type‐II level alignment is determined. However, C60/ML‐WS2 exhibits stronger n‐type characteristics on sapphire, which is suggested to be due to native donor‐type defects of ML‐WS2. While these remain occupied and active on the insulating substrate, they are emptied into the charge reservoir of the conductive substrate. These insights should be considered in the future design of functional heterostructures of inorganic ML and molecular semiconductor materials.eng
dc.description.sponsorshipDeutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659
dc.language.isoengnone
dc.publisherHumboldt-Universität zu Berlin
dc.rights(CC BY 4.0) Attribution 4.0 Internationalger
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectelectronic propertieseng
dc.subjectmonolayereng
dc.subjectmolecular semiconductoreng
dc.subjectphotoelectron spectroscopyeng
dc.subjecttransition metal dichalcogenideseng
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitennone
dc.titleEnergy Level Alignment at the C60/Monolayer‐WS2 Interface on Insulating and Conductive Substratesnone
dc.typearticle
dc.identifier.urnurn:nbn:de:kobv:11-110-18452/25259-2
dc.identifier.doihttp://dx.doi.org/10.18452/24582
dc.type.versionpublishedVersionnone
local.edoc.pages9none
local.edoc.type-nameZeitschriftenartikel
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
dc.description.versionPeer Reviewednone
dc.identifier.eissn2199-160X
dcterms.bibliographicCitation.doi10.1002/aelm.202100425none
dcterms.bibliographicCitation.journaltitleAdvanced electronic materialsnone
dcterms.bibliographicCitation.volume7none
dcterms.bibliographicCitation.issue10none
dcterms.bibliographicCitation.articlenumber2100425none
dcterms.bibliographicCitation.originalpublishernameWileynone
dcterms.bibliographicCitation.originalpublisherplaceChichesternone
bua.departmentMathematisch-Naturwissenschaftliche Fakultätnone

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