Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side

Abstract

The effects of design and thicknesses of different optically transparent p-current spreading layers [short-period superlattice, superlattice (SL), and bulk p- Al 0.38 Ga 0.62 N ] as well as the type and thickness of the p-GaN cap layer on the electrical and optical characteristics of 310 nm ultraviolet light-emitting diodes (LEDs) are investigated. Scanning transmission electron microscopy measurements display self-organized composition variations in the nonpseudomorphically grown SLs, reducing the effect of increased hole injection efficiency of a SL. In addition, the effect leads to an increased operation voltage. In contrast, the bulk p-AlGaN layer has a uniform composition and the corresponding LEDs show only a slightly lower output power along with a lower operating voltage. If the thickness of the p-AlGaN bulk layer in the LED is reduced from 150 nm to 50 nm, the output power increases and the operating voltage decreases. Finally, LEDs with a nonuniform p + -GaN cap layer from a 3D island-like growth mode feature the highest output power and operating voltage. In contrast, the output power and operating voltage of LEDs with a smooth and closed cap depend on the thickness of p + -GaN. The highest output power and lowest operating voltage are achieved for LEDs with the thinnest p + -GaN cap.