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2020-09-09Zeitschriftenartikel DOI: 10.18452/26337
Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side
dc.contributor.authorKolbe, Tim
dc.contributor.authorKnauer, Arne
dc.contributor.authorRass, Jens
dc.contributor.authorCho, Hyun Kyong
dc.contributor.authorMogilatenko, Anna
dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorLobo Ploch, Neysha
dc.contributor.authorEinfeldt, Sven
dc.contributor.authorWeyers, Markus
dc.date.accessioned2023-03-29T11:04:10Z
dc.date.available2023-03-29T11:04:10Z
dc.date.issued2020-09-09none
dc.date.updated2020-12-07T15:08:02Z
dc.identifier.urihttp://edoc.hu-berlin.de/18452/27021
dc.description.abstractThe effects of design and thicknesses of different optically transparent p-current spreading layers [short-period superlattice, superlattice (SL), and bulk p- Al 0.38 Ga 0.62 N ] as well as the type and thickness of the p-GaN cap layer on the electrical and optical characteristics of 310 nm ultraviolet light-emitting diodes (LEDs) are investigated. Scanning transmission electron microscopy measurements display self-organized composition variations in the nonpseudomorphically grown SLs, reducing the effect of increased hole injection efficiency of a SL. In addition, the effect leads to an increased operation voltage. In contrast, the bulk p-AlGaN layer has a uniform composition and the corresponding LEDs show only a slightly lower output power along with a lower operating voltage. If the thickness of the p-AlGaN bulk layer in the LED is reduced from 150 nm to 50 nm, the output power increases and the operating voltage decreases. Finally, LEDs with a nonuniform p + -GaN cap layer from a 3D island-like growth mode feature the highest output power and operating voltage. In contrast, the output power and operating voltage of LEDs with a smooth and closed cap depend on the thickness of p + -GaN. The highest output power and lowest operating voltage are achieved for LEDs with the thinnest p + -GaN cap.eng
dc.description.sponsorshipBundesministerium für Bildung und Forschung http://dx.doi.org/10.13039/501100002347
dc.language.isoengnone
dc.publisherHumboldt-Universität zu Berlin
dc.rights(CC BY 4.0) Attribution 4.0 Internationalger
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectlight-emitting diode heterostructureseng
dc.subjectmetal-organic vapor phase epitaxieseng
dc.subjectp-current spreading layerseng
dc.subjectp-GaN cap layerseng
dc.subjectultraviolet light-emitting diodeseng
dc.subject.ddc530 Physiknone
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitennone
dc.titleImproved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Sidenone
dc.typearticle
dc.identifier.urnurn:nbn:de:kobv:11-110-18452/27021-6
dc.identifier.doihttp://dx.doi.org/10.18452/26337
dc.type.versionpublishedVersionnone
local.edoc.pages6none
local.edoc.type-nameZeitschriftenartikel
local.edoc.container-typeperiodical
local.edoc.container-type-nameZeitschrift
dc.description.versionPeer Reviewednone
dc.identifier.eissn1862-6319
dcterms.bibliographicCitation.doi10.1002/pssa.202000406none
dcterms.bibliographicCitation.journaltitlePhysica status solidinone
dcterms.bibliographicCitation.volume217none
dcterms.bibliographicCitation.issue20none
dcterms.bibliographicCitation.articlenumber2000406none
dcterms.bibliographicCitation.originalpublishernameWiley-VCHnone
dcterms.bibliographicCitation.originalpublisherplaceWeinheimnone
bua.departmentMathematisch-Naturwissenschaftliche Fakultätnone

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