2005-11-02Buch DOI: 10.18452/2567
Qualitative behavior of weak solutions of the drift diffusion model for semiconductor devices coupled with Maxwell’s equations
The transient drift-diffusion model describing the charge transport in semiconductors is considered. Poisson's equation, which is usually used, is replaced by Maxwell's equations. The diffusion- and mobility-coefficients and the dielectric and magnetic susceptibilities may depend on the space-variables. Global existence and convergence to the thermal equilibrium is shown.
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