2011-08-11Buch DOI: 10.18452/2776
Modeling for Chemical Vapor Deposition
In this paper we present the modeling and simulation of a chemical vapor deposition for metallic bipolar plates. In the models we discuss the application of different ideas to simulate the transport of chemical reactants in the gas chamber. Based on the multi-scaling problem of the underlying physical behavior, we discuss adapted models in different domains and scales. We combine analytically motivated solutions on simplified domains with numerical solutions based on more complex domains. The near-and-far-field context is based on the large scale, that can be done with continuous models, as convection-diffusion-reaction equations, and small scales, that are based on chemical and molecular models as Boltzmann equations. As an expert system of different models, we deal with different problems. Numerical methods are described in the context of time- and space-discretization methods. For the simulations we apply analytical as well as numercial methods to obtain results to predict the growth of thin layers. The results are discussed with physical experiments to give a valid model for the assumed growth.
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