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2011-09-20Buch DOI: 10.18452/2818
Kinetic processes and Phase-transition of CVD processes for Ti₃SiC₂
dc.contributor.authorGeiser, Jürgen
dc.contributor.authorRoehle, Robert
dc.date.accessioned2017-06-15T18:24:10Z
dc.date.available2017-06-15T18:24:10Z
dc.date.created2011-09-20
dc.date.issued2011-09-20
dc.identifier.issn0863-0976
dc.identifier.urihttp://edoc.hu-berlin.de/18452/3470
dc.description.abstractIn this paper we present a kinetic model based on numerical simulations of a chemical vapor deposition (CVD) process. We discuss a model that is based on kinetics of the deposition rates to the material. Such a simple model can explain the experimental results. Based on experiments with Ti3SiC2 we verify our model. Here different processes of ionized Ti+, Ti++ and C are important to achieve our stoichiometry. The numerical methods are based on iterative schemes to solve coupled and nonlinear differential equations. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers.eng
dc.language.isoeng
dc.publisherHumboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät II, Institut für Mathematik
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subjectconvection-diffusion equationseng
dc.subjectPE-CVD processeng
dc.subjectpathway modeleng
dc.subject.ddc510 Mathematik
dc.titleKinetic processes and Phase-transition of CVD processes for Ti₃SiC₂
dc.typebook
dc.identifier.urnurn:nbn:de:kobv:11-100193147
dc.identifier.doihttp://dx.doi.org/10.18452/2818
local.edoc.container-titlePreprints aus dem Institut für Mathematik
local.edoc.pages23
local.edoc.type-nameBuch
local.edoc.container-typeseries
local.edoc.container-type-nameSchriftenreihe
local.edoc.container-volume2010
local.edoc.container-issue1
local.edoc.container-year2010
local.edoc.container-erstkatid2075199-0

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