Modeling for Chemical Vapor Deposition

Abstract

In this paper we present modeling and simulation for chemical vapor deposition (CVD) on metallic bipolar plates. In the models we discuss the application of different models to simulate the plasma-transport of chemical reactants in the gas chamber. We take into account one-dimensional models, that can be treated analytically under some assumptions and multi-dimensional models that are solved numerically with software packages. Because of the multi-scaling problem of the physical behavior, we discuss adapted models in different domains and scales. The near- and far-field contexts are based on large scales that can be treated with continuous models, such as convection-diffusion-reaction equations, and small scales that are based on chemical and molecular models, e.g. Boltzmann-equations. The results are discussed with physical experiments to give valid models for the assumed growth of thin layers.